Reinforced bond pad for a semiconductor device

ABSTRACT

Disclosed herein are novel support structures for pad reinforcement in conjunction with new bond pad designs for semiconductor devices. The new bond pad designs avoid the problems associated with probe testing by providing a probe region that is separate from a wire bond region. Separating the probe region  212  from the wire bond region  210  and forming the bond pad  211  over active circuitry has several advantages. By separating the probe region  212  from the wire bond region  210 , the wire bond region  210  is not damaged by probe testing, allowing for more reliable wire bonds. Also, forming the bond pad  211  over active circuitry, including metal interconnect layers, allows the integrated circuit to be smaller.

BACKGROUND OF THE INVENTION

The present invention relates generally to the fabrication ofsemiconductor devices, and the packaging of semiconductor devices. Morespecifically, this invention pertains to bonding pads, probing pads andsolder bump pads on semiconductor devices and support structures forbonding pads.

Following the fabrication of the semiconductor devices on a wafer, eachdevice (also known as a chip or die) is tested for functionality, or thewafers are “sorted”. Typically, a wafer having devices fabricatedthereon is placed on a vacuum chuck. Electrical probes from a testercontact bonding pads formed on each of the devices to determine ifindividual devices are functional.

After the wafers are sorted, the wafer is cut and the devices areseparated from one another using cutting tools known to those skilled inthe art. The devices are then assembled onto a substrate usingprocedures known as die attach or die bonding.

Subsequent to the attachment of the devices to package substrates,electrical connections are made between the bonding pads on the devicesand the electrical leads on the package. The electrical connections aremade using different techniques including wire bonding, flip-chipbonding and tape-automated bonding. At least With respect to wirebonding, a bonding pad is subjected to a force applied directly to thebond that may damage underlying layers, materials, or components of adevice.

In wire bonding techniques, such as thermo-compression, ultra-sonicbonding and thermo-sonic, a metal wire is pressed against a bond pad.Depending on the particular technique, the wire is heated and/orsubjected to ultra-sonic vibrations to bond the metal wire to thebonding pad of the semiconductor device. The wire is then connected toelectrical leads on the device package.

After the die attachment and wire bonding operations are completed, thedevice is then “packaged” into a plastic molded package or a ceramicpackage or similar package, depending upon the die size, packageapplication and end-use.

The devices are subjected to thermal and mechanical stresses duringelectrical testing during wafer “sort” and subsequent assemblyprocedures. Damage to the device may be caused during wafer sorting,when the testing probes are pressed against the bonding pad. Probetesting involves the use of a probe needle or other contact deviceswhich may damage and/or contaminate the bond pad. During the probingoperation, bond pad metal may be deformed, “gouged” or “ploughed” intoone or more regions of the bond pad, exposing underlying layers such asbarrier materials, dielectrics and/or other conductors such as aluminumand copper, thus preventing a reliable electrical connection between thebond pad and the packaging pin during subsequent wire bonding. Moreover,the nature of the bond may be mechanically and metallurgically weak,leading to wire lift-off or a “non-stick” (no adherence) situation. Thisproblem is exacerbated by the ever decreasing sizes of bond pad on whichsmaller wire bonds are formed, leaving very small regions where a soundwire bond is possible. Furthermore, during the wire bond operations,device layers underlying the bond pad are compressed and in someinstances materials or components may be cracked and damaged. Dielectriccracking can occur and cracks can propagate through the layer to devicecomponents, which in turn may be damaged. Components may also befabricated underneath the bond pad, and may be damaged directly from theforce of the probe and wire bond operations.

Thus, a need exists to provide a bonding pad support structure thateffectively protects device components that are disposed within thedevice directly under the pad in conjunction with minimizing the damagecaused by probe testing and wire bonding or flip chip solder bumping.Such a support structure should isolate the damage within an underlyinglayer to an area subjacent the bonding pad. The structures of thepresent invention will prevent damage propagation to regions proximal tothe bond pad. An added benefit is that the substructure will inhibitbond pad peeling that may result from underlying layer damage.

BRIEF DESCRIPTION OF THE DRAWINGS

Some advantages of the present invention having been stated, others willappear as the description proceeds, when considered in conjunction withthe accompanying drawings, which are not necessarily drawn to scale, inwhich:

FIG. 1 is a perspective view of a semiconductor device.

FIGS. 2 through 8 illustrate cross-sectional views of semiconductordevice embodiments in accordance with the present invention.

FIG. 9A shows a top planar view of an embodiment of the subjectinvention with certain parts removed to expose underlying layers andfeatures. FIG. 9B is a layered or collapsed view of the embodiment shownin FIG. 9A.

DETAILED DESCRIPTION

The subject invention is directed to novel support structures for padreinforcement in conjunction with new pad designs for semiconductordevices. The new pad designs avoid the problems associated with probetesting by providing a probe region that is separate from a wire bondregion. Separating the probe region from the wire bond region andforming the bond pad over active circuitry has several advantages. Byseparating the probe region from the wire bond region, the wire bondregion is not damaged by probe testing, allowing for more reliable wirebonds. Also, forming the bond pad over active circuitry, including metalinterconnect layers, allows the integrated circuit to be smaller.

The semiconductor device of the present invention includes at least onebonding pad for testing the functionality of the device and/or forelectrically connecting the device to a device package where in thebonding pad comprises a wire bond region and a probe testing region. Thesupport structure under the wire bond region may include at least twometal layers and an insulating layer interposed between the two metallayers. The two metal pads are interconnected by a metal featureextending within the insulating layer. The feature is patterned in sucha manner to divide the insulating layer into a plurality of sections, atleast a portion of which are disposed within a cross-sectional area ofthe device defined by a periphery of the bonding pad window. In apreferred embodiment, the feature includes an array of metal-filledrecesses, which are arranged to intersect one another, forming aplurality of discrete dielectric sections.

The bond pad support structure is not limited to two interconnectedmetal layers, but may include two or more metal layers. For example, ina device having seven metal layers, the top three metal layers (M5, M6and M7) may be interconnected through metal-filled recesses. A firstarrangement interconnects layers M5 and M6, and a second arrangementinterconnects layers M6 and M7.

In this manner, the metal-filled features in combination with the twometal layers provide a strong composite interconnect structure thatdistributes the stress and/or force applied during device testing andwire bonding. The support structure minimizes the amount of damageoccurring to device components subjacent to the bonding pad. Inaddition, the isolation of the dielectric sections inhibits propagationof cracking, and ideally confines cracks within a periphery of the arrayof the recesses.

Semiconductor devices 11, as shown in FIG. 1, typically include aplurality of metal layers that are separated by insulating layersfabricated over a wafer substrate. The metal layers provide electricalconnections between the active regions of the semiconductor device andthe bond pads or between various components of the semiconductor deviceitself. Vias or holes formed within insulating layers are filled withconductive metals to interconnect the various metal layers. The metallayers are formed of conductive materials, for example, aluminum and itsalloys, copper and its alloys, or gold.

A semiconductor device 11 is generally depicted in FIG. 1. A passivationlayer 13, usually comprising a dielectric material, overlays theunderlying composite stack of metal layers, insulating layer and wafersubstrate, generally designated as 25. Openings are etched in thepassivation layer 13, exposing discrete areas of a top metal layer,forming metal pads 12. These metal pads 12 conventionally serve asconnections from the device circuitry to a device package (not shown).Wire bonds 24, solder bumps or tape-automated bonding may be formed onthe metal pads 12, for connection to the package substrate (not shown).The invention embodiments disclosed herein will typically be subject towire bonding and/or probe testing processes, but may be subjected toother processes known in the art such as solder bump processes.

FIG. 10 shows a prior art cross-section of a semiconductor device 1000comprising a substrate 1020 onto which multiple interconnected metallayers M1-M8 are formed. Above M8 is formed a passivation layer 1016having an opening formed thereon designated by dashed lines 1025. Theopening formed above M8 forms a metal pad 1026. Formed above the metalpad 1026 is an aluminum bond pad 1010. Device 1000 lacks any supportstructure under the bond pad 1010 and metal pad 1026.

FIG. 2 illustrates one embodiment of a semiconductor device 200comprising a bond pad 211 having a wire bond region 210 that is separatefrom a probe region 212. The semiconductor device 200 comprises asubstrate 214 onto which several interconnected metal layers are formed.The semiconductor device 200 comprises seven metal layers designated asM1-M7. Those skilled in the art will appreciate that more or less layersmay be formed depending on the device design functions. Formed over thetop most metal layer, M7, is a first outer passivation layer 216. Anopening 225 is formed in the passivation layer 216 between the dashedlines. The top surface of M7 provides a metal pad 226 defined by opening225. The metal pad 226, and corresponding metal pads discussed inrelation to other embodiments below, may be solid or patterned. Thesemiconductor device 200 comprises a bond pad 211 that is partiallyformed over the metal pad 226 serving as the wire bond region 210 andpartially formed over the first outer passivation layer 216 serving asthe probe region 212. Under the probe region 212, is a probe supportmetal pad 250 that is interconnected with other metal layers in thedevice 200. When referring to the wire bond region or probe regionssubstantially disposed over or resting on another layer or structure,this is intended to mean a majority of the wire bond or probe regionsthat are disposed over or resting on the other layer or structure.

Between M7 and M6 is an insulating layer 228. Formed within theinsulating layer 228 and interconnecting M7 and M6 is a plurality ofmetal features 222. The metal feature(s) 222 are typically patterned,formed and/or etched into the dielectric material of the insulatinglayer 228 and then filled with a conductive metal. The metal feature maydivide or separate the insulating layer into a plurality of sectionssuch as forming a “grid-like or “mesh-like” structure. These metalfeatures 222 may comprise metal filled recesses which are constructedusing damascene processes, by which recesses are etched in thedielectric material of the insulating layer 228. A conductive metal isthen deposited within the recesses 222 and may or may not besimultaneously deposited to form trenches 250 of M7, depending uponwhether a single damascene or dual damascene method of fabrication isemployed. In addition to the conventional materials such as aluminum,copper or gold, the conductive metals may include barrier layers orliner/adhesive layers consisting of any number of metals typically usedfor fabrication in interconnect structures such as refractorymetals—tungsten, titanium, tantalum, cobalt or alloys thereof includingtitanium nitride, or tantalum nitride. Those skilled in the art willimmediately recognize the distinction between use of one set of metalsand materials over another depending upon whether the method offabricating the semiconductor device was single damascene or dualdamascene. In the single damascene case, upon deposition of the metalinto the recesses 222, the excess metal and a subsequently depositedinsulating layer 228 may then be planarized using chemical-mechanicalpolishing techniques as is well documented in the prior art. A metallayer is then fabricated over an insulating layer as described above. Ifcopper is used to fill the recesses 222 in the insulating layer 228,consecutive non-conductive layers and metal layers may be fabricatedusing a dual damascene process. It also follows, that those skilled inthe art will recognize that the embodiments of the present invention canbe easily applied if the conductor material is not copper and involvesother conventional materials such as aluminum and tungsten.

In this manner, the metal-filled recesses (such as 222) provide anelectrical and mechanical interconnection between the respective metallayers M1-M7. The dimensions of the metal plates, the different devicelayers and metal features will vary according to the gate size of thetransistors, as well as the type of metals and to dielectric materialsof a semiconductor device. Metal layers may be as thick or thin asnecessary to fulfill the device design functions.

The combination of the bond pad 211 having a separate wire bond region210 and probe region 212 with the support structure formed by the metallayers M7 and M6 and metal features 222 under the wire bond regionprovides a novel bond pad configuration. The support structure providesresiliency against thermal and mechanical stresses during wire bondingtechniques while the separate probe region prevents damage to the wirebond region potentially caused by probe testing.

Formed over the first passivation layer 216 and partially over the bondpad 211 is a second passivation layer 218. The second passivation layerserves to protect the edges of the regions 210 and 212 pad frommechanical and metallurgical damage during wafer dicing, sort andassembly. If the pad was left exposed, corrosion during wafer dicing atthe edges of the pad would be observed.

The metal layers M1-7 may be fabricated using processes known to thoseskilled in the art. For example, damascene process may be used tofabricate the metal layers when copper is used as the conductive metal.Alternatively, a subtractive etch process is typically used to fabricatealuminum metal layers. The non-conductive material of insulating layer228 may include dielectrics such as silicon dioxide, silicon nitride orother nonconductive materials such as porous dielectrics, polyamides,aerogels, xerogels, other low-k materials or PCBs.

As mentioned above, the insulating layers typically comprise anonconductive material such as a dielectric material. The thickness ofthe insulating layer will vary, in part, according to the type ofdielectric layers used, and the type of interconnect features formedwithin the dielectric. Similarly, the size and spacing of the recesses222 will depend in part on the type of nonconductive material used tofabricate the insulating layer 228. One skilled in the art willappreciate that the size and spacing may vary depending on variousfactors and limitations as referred to above.

In FIG. 2, metal layers M7 and M6, insulating layer 228, and metalfeatures 222 form what is referred to herein as a 2/1 support structure.This is because there are two metal layers with one interveningdielectric region between a metal support regions, such as metal filledfeatures 222. Turning to FIG. 3, the semiconductor device embodiment 300has a 2/1 support structure similar to that of device 200. However,device 300 comprises a second outer passivation layer 318 which has beenpatterned to provide separating region 340 positioned on top of the bondpad 311. The provision of the separating region 340 serves to preventprobe tips from flowing over into the wire bond region 310 during probetesting. In addition, device 300 comprises a floating metal region 350positioned under the probe region 312. The floating metal region 350 isderived from M7 and may be advantageous to use since it has a differentpotential than a conventional connected pad, shown as 250 in FIG. 2.This minimizes copper corrosion if any copper is exposed during probingas the pad is electrically isolated from other features on thesemiconductor device. The floating metal region 350 provides mechanicalstiffness, but provides little reinforcement to the probe region 312.

In another embodiment shown in FIG. 4, the probe region 412 is supportedby a floating metal region 450 having a “mesh” or “waffle” structure sothat the region 450 consists of alternate metal and dielectric areas.The bond pad 411 is separated by a separating region 440 of a secondpassivation layer 418, similar to device 300.

FIG. 5 shows a semiconductor device embodiment 500 of the subjectinvention wherein metal layers M6, M7 and M8 for a 3/2 supportstructure, i.e., three metal layers with two metal filled features withintervening dielectric positioned between M5 and M6, M6 and M7. The bondpad has separate wire bond 510 and probe 512 regions that are separatedby separating region 540 formed from second passivation layer 518. Theprobe region is supported by a floating metal pad 540 that is meshpatterned as described above.

The semiconductor device embodiment 600 shown in FIG. 6 comprises a bondpad 611 comprising a wire bond region 610 and a probe region 612. Thewire bond region 610 and probe region 612 are contiguous and coplanar,wherein the probe region 612 generally does not cover a firstpassivation layer 616. Separating the wire bond region 610 and the proberegion 612 is a separating region 640 formed from a second passivationlayer 618. The probe region 612 is generally supported by dielectricmaterial 655 immediately subjacent to the probe region 612. The supportstructure subjacent to the wire bond region 610 is a 2/1 structureformed from metal layers M6 and M7 and intervening dielectric and metalfilled features 628.

FIG. 7 shows a semiconductor device embodiment 700 similar to embodiment600 wherein the bond pad 711 comprises a coplanar and contiguous wirebond 710 and probe 712 regions. However, device 700 comprises a 3/2support structure under wire bond region 710 formed from metal layersM6, M7, and M8 and intervening dielectric and metal filled features 727and 728. In addition, immediately subjacent to probe region 712 is ametal layer 750 serving to support the probe region 712. The metal layer750 forms part of the M8 structure and may or may not be a floatingmetal feature. In one embodiment, layer 750 may be connected toadditional metal layers just at the periphery of the probe region 712,as shown in FIG. 7. Note that an additional layer of metal, M8, has beenadded to previously discussed embodiments, as FIG. 7 describes the 3/2support structure.

Another semiconductor device embodiment 800 is shown in FIG. 8.Embodiment 800 comprises a bond pad 811 that comprises separate wirebond 810 and probe 812 regions that are coplanar. The wire bond region810 and probe region 812 are separated by a spacer 845 that does not siton top of but is coplanar with wire bond 710 and probe 712 regions.Spacer 845 is typically formed from first outer passivation layer 816.The wire bond 810 and probe 812 regions are conductively connectedthrough one or more peripheral connections. The wire bond region 810 issupported by a 3/2 support structure described above. The probe region812 is supported by a layer of dielectric material. A second passivationlayer 818 is formed at least partially over the bond pad 811.

FIG. 9A shows a top planar view of the embodiment shown in FIG. 8showing openings in second passivation layer 818 with separate regionsfor probing and wire bonding, probe region and wire bond region 812, 810respectively. The separating region layer 845 separating regions 810 and812 is also shown. FIG. 9B is a layered or collapsed view depictingfeatures of FIG. 8 through multiple sections, starting from the secondpassivation layer 818 and opening 816 looking down on top of M7. Thelayers shown are openings in second passivation layer 818, metal layerM8, and the metal filled recesses 951 between M8 and M7 and adjacentdielectric material 952. Also shown is separating region 845 separatingregions 810 and 812. The dielectric region immediately below the proberegion 812 is shown at the top of the figure as 953.

As used herein, the term subjacent is given its conventional meaning,i.e., located beneath or below. The term immediately subjacent denotesthat some feature or component must be beneath or below another featureor component.

The device embodiments illustrated in FIGS. 2-9 represent variousfeatures of the subject invention. Some features may be combined withother features depending on the device design functions. For example,the separate wire bond and probe regions of the bond pad may be coplanaror the probe region may be on an elevated plane relative to the wirebond region. In the latter scenario, the probe region typically rests ona first outer passivation layer. A separating region may be disposed ontop of the bond pad to separate the wire bond and probe regions or aseparating region may be disposed in between and generally coplanar withthe wire bond and probe regions. The support structure under the wirebond region may take the form of a 2/1, 3/2, 4/3 etc. structure. Theprobe region may be supported by an interconnected pad, floating metalpad, a floating, mesh pad, or a layer of dielectric material. The proberegion support may be separated from the probe region by the first outerpassivation layer. One or more of the foregoing features may be combinedbased on the constraints of the device and intended device function.

While the preferred embodiments of the present invention have been shownand described herein in the present context, it will be obvious thatsuch embodiments are provided by way of example only and not oflimitation. Numerous variations, changes and substitutions will occur tothose of skilled in the art without departing from the invention herein.For example, the present invention need not be limited to best modedisclosed herein, since other applications can equally benefit from theteachings of the present invention. Accordingly, it is intended that theinvention be limited only by the spirit and scope of the appendedclaims.

1. A reinforced bond pad configuration formed on a semiconductor device,said configuration comprising a first outer positioned passivation layerformed on the device comprising at least one opening formed thereinhaving a periphery; at least two metal layers formed on the devicesubjacent to the first outer positioned passivation layer wherein the atleast one opening formed exposes a top surface of a top metal layerthereby forming a metal pad; a first insulating layer interposed betweenthe at least two metal layers; a plurality of metal features formedwithin the insulating layer between the at least two metal layers of thedevice, a portion of which are disposed within a cross-sectional area ofthe device defined by said opening periphery so as to reinforce saidmetal pad; and a bond pad formed over and in contact with said metalpad, said bond pad comprising a probe region and a wire bond region,wherein said wire bond region substantially covers said metal pad. 2.The reinforced bond pad configuration of claim 1, wherein a majority ofthe surface area of said probe region extends over said passivationlayer.
 3. The reinforced bond configuration of claim 1, wherein a secondpassivation layer is formed, at least partially, over said bond pad. 4.The reinforced bond pad configuration of claim 3, wherein a separatingregion is formed from said second passivation layer and on top of saidbond pad such that said separating region separates said probe regionand said wire bond region.
 5. The reinforced bond pad configuration ofclaim 1 wherein said probe region and said wire bond region are coplanarand contiguous.
 6. The reinforced bond pad configuration of claim 1,wherein said probe region substantially rests on top of said firstpassivation layer.
 7. The reinforced bond pad configuration of claim 1,wherein said wire bond region and said probe region are separated by aseparating region formed from said first passivation layer that iscoplanar with said wire bond region and said probe region.
 8. Thereinforced bond pad configuration of claim 1, wherein said at least twometal layers comprises two metal layers wherein said two metal layersand said first insulating layer form a 2/1 support structure.
 9. Thereinforced bond pad configuration of claim 1, wherein said at least twometal layers comprises three metal layers with said first insulatinglayer interposed between a bottom metal layer and middle metal layer ofsaid three metal layers and a second insulating layer interposed betweensaid middle metal layer and a top metal layer of said three metal layersso as to form a 3/2 structure.
 10. The reinforced bond pad configurationof claim 1, wherein probe region is supported by a floating metal regionsubjacent to said probe region.
 11. The reinforced bond padconfiguration of claim 10, wherein said floating metal region is formedto create alternating metal and insulating material regions.
 12. Thereinforced bond pad configuration of claim 1, wherein said probe regionis supported by an interconnected metal pad subjacent to said proberegion.
 13. The reinforced bond configuration of claim 1, wherein saidprobe region is supported by insulating material subjacent to said proberegion, or optionally immediately subjacent said probe region.
 14. Areinforced bond pad configuration formed on a semiconductor device, saidconfiguration comprising a first outer positioned passivation layerformed on the device comprising at least one opening formed thereinhaving a periphery; at least two metal layers formed on the devicesubjacent to the first outer positioned passivation layer wherein the atleast one opening formed exposes a top surface of a top metal layerthereby forming a metal pad; a first insulating layer interposed betweenthe at least two metal layers; a plurality of metal features formedwithin the insulating layer between the at least two metal layers of thedevice, a portion of which are disposed within a cross-sectional area ofthe device defined by said opening periphery so as to reinforce saidmetal pad; a bond pad formed over and in contact with said metal pad,said bond pad comprising a probe region and a wire bond region, whereinsaid wire bond region substantially covers said metal pad; and a secondpassivation layer formed over said bond pad, wherein a separating regionis formed from said second passivation layer and on top of said bond padsuch that said separating region separates said probe region and saidwire bond region.
 15. The reinforced bond pad configuration of claim 15,wherein said probe region substantially rests on top of said firstpassivation layer.
 16. A reinforced bond pad configuration formed on asemiconductor device, said configuration comprising a first outerpositioned passivation layer formed on the device comprising at leastone opening formed therein having a periphery; at least two metal layersformed on the device subjacent to the first outer positioned passivationlayer wherein the at least one opening formed exposes a top surface of atop metal layer thereby forming a metal pad; a first insulating layerinterposed between the at least two metal layers; a plurality of metalfeatures formed within the insulating layer between the at least twometal layers of the device, a portion of which are disposed within across-sectional area of the device defined by said opening periphery soas to reinforce said metal pad; a bond pad formed over and in contactwith said metal pad, said bond pad comprising a probe region and a wirebond region, wherein said wire bond region substantially covers saidmetal pad, and wherein said wire bond region and said probe region areseparated by a separating region formed from said first passivationlayer that is coplanar with said wire bond region and said probe region.17. The reinforced bond pad configuration of claim 16, wherein saidprobe region and said wire bond region are coplanar and contiguous.